NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 2N5128 | 80131 | A | 3 | 2 | 3 | TX | ||
| 2N5128 | 15818 | F | 5 | 9 | 3 | TX | ||
| 2N5128 | 27622 | A | 5 | 9 | 3 | TX | ||
| RELEASE5545 | 80131 | A | 5 | 1 | 3 | TX | ||
| 2N5128 | 31338 | A | 5 | 2 | 3 | TX | ||
| 2N5128 | 07263 | A | 5 | 9 | 3 | TX | ||
| 720-2N5128 | 13848 | F | 5 | 9 | 5 | 48 | ||
| 2N5128 | 12040 | F | 5 | 9 | 3 | TX |
CAGE Information
| Code | Company |
|---|---|
| 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 15818 | TELCOM SEMICONDUCTOR INC |
| 27622 | BURNS AND TOWNE INC |
| 31338 | SEMITRONICS CORP |
| 13848 | JOHNSON E F CO COMCO/COMMUNICATIONS |
| 12040 | NATIONAL SEMICONDUCTOR CORP |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5545 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5545 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| AXGY | MOUNTING METHOD | TERMINAL |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ADAV | OVERALL DIAMETER | 0.325 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| ABHP | OVERALL LENGTH | 0.240 INCHES MAXIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
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