NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 2N632 | 80131 | A | 3 | 2 | 3 | TX | ||
| 2N632 | 11058 | F | 5 | 9 | 3 | TX | ||
| 2N632 | 12045 | F | 5 | 9 | 3 | TX | ||
| 2N632 | 08225 | F | 5 | 9 | 5 | TX | ||
| RELEASE2314 | 80131 | A | 5 | 1 | 3 | TX | ||
| 2N632 | 34428 | H | 5 | 9 | 3 | TX | ||
| 2N632 | 49956 | A | 5 | 9 | 5 | TX | ||
| 2N632 | 3B150 | A | 5 | 2 | 5 | TX | ||
| 2N632 | 81349 | M | C | 1 | 6 | ZZ | AC |
CAGE Information
| Code | Company |
|---|---|
| 08225 | INDUSTRO TRANSISTOR CORP |
| 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 11058 | CSR INDUSTRIES INC |
| 12045 | ELECTRONIC TRANSISTORS CORP |
| 34428 | UNITED PAGE INC |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 25.00 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 24.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | GERMANIUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 167.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
Similar Parts
2N632 ,
2N632 ,
5961-00-103-1556 ,
5961001031556 ,
001031556
,
2N632 ,
2N632 ,
2N632 ,
2N632 ,
RELEASE2314 ,
2N632 ,
2N632 ,
2N632 ,
2N632 ,