NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
SK00047 | H0203 | A | 5 | 2 | 1 | ZG | ||
11733687 | 19200 | A | C | 1 | 5 | TX | AF | |
3N163 | 17856 | A | C | 1 | 1 | ZZ | AC | |
RELEASE5870 | 80131 | A | 5 | 1 | 3 | TX | ||
3N163 | 80131 | A | 3 | 2 | 3 | TX | ||
580-347 | 92739 | R | C | 1 | 5 | TX | AF | |
M113 | 17856 | A | 5 | 9 | 6 | TX | ||
5800583-942200-105 | C0426 | A | 5 | 2 | 1 | ZG | ||
258409-1 | 51993 | A | C | 1 | 5 | TX | AW | |
3N163 | 21845 | A | 5 | 2 | 5 | 9Z | ||
F1100 | 30471 | A | C | 1 | 5 | TX | AF | |
3N163 | 32293 | F | 5 | 9 | 3 | TX |
CAGE Information
Code | Company |
---|---|
17856 | SILICONIX INCORPORATED DIV SILICONIX |
H0203 | THALES NEDERLAND |
19200 | U S ARMY ARMAMENT RESEARCH & DEVELOP |
80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
92739 | AMPEX SYSTEMS CORP |
C0426 | EADS DEUTSCHLAND T/A CASSIDIAN ELECT |
51993 | CHARLES STARK DRAPER LABORATORY INC. |
21845 | SOLITRON DEVICES INC. |
30471 | AMERICAN HOFMANN CORPORATION |
32293 | INTERSIL INC SUB OF GENERAL ELECTRIC |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
AXGY | MOUNTING METHOD | TERMINAL |
ABBH | INCLOSURE MATERIAL | METAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTRD | POWER RATING PER CHARACTERISTIC | 375.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5870 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL INSULATED GATE TYPE |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
Similar Parts
3N163 ,
3N163 ,
5961-00-139-2326 ,
5961001392326 ,
001392326
,
SK00047 ,
11733687 ,
3N163 ,
RELEASE5870 ,
3N163 ,
580-347 ,
M113 ,
5800583-942200-105 ,
258409-1 ,
3N163 ,
F1100 ,
3N163 ,