NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
2N4857 | 80131 | A | 3 | 2 | 3 | TX | ||
2N4857 | C7191 | A | 5 | 2 | 6 | ZG | ||
515363-1 | 31550 | A | C | 1 | 5 | TX | AF | |
2N4857 | 18667 | F | 5 | 1 | 5 | TX | ||
2N4857 | 04713 | A | 5 | 1 | 5 | TX | ||
5800583-942200-103 | C0426 | A | 5 | 2 | 3 | ZG | ||
1855-0244 | 28480 | A | C | 1 | 5 | TX | AF | |
22N4857 | 27014 | A | 5 | 1 | 5 | TX | ||
2N4857 | 17856 | A | 5 | 1 | 5 | TX | ||
RELEASE5360 | 80131 | A | 5 | 1 | 3 | TX | ||
2N4857A | C7191 | A | 5 | 9 | 6 | ZG | ||
5L5512-401-33 | D1901 | A | 5 | 2 | 3 | ZG | ||
4BK505741 | K1156 | A | 5 | 2 | 4 | ZK | ||
2N4857 | 01295 | A | 5 | 2 | 5 | 48 |
CAGE Information
Code | Company |
---|---|
01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
C7191 | ADELCO ELEKTRONIK GMBH |
31550 | ITT CORPORATION DBA ITT COMMUNICATIO |
18667 | HALLIBURTON GEOPHYSICAL SERVICES INC |
04713 | FREESCALE SEMICONDUCTOR INC. |
C0426 | EADS DEUTSCHLAND T/A CASSIDIAN ELECT |
28480 | HEWLETT PACKARD CO |
27014 | NATIONAL SEMICONDUCTOR CORPORATION |
17856 | SILICONIX INCORPORATED DIV SILICONIX |
D1901 | EADS DEUTSCHLAND GMBH -VERTEIDIGUNG |
K1156 | BAE SYSTEMS INTEGRATED SYSTEM TECHNO |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
ADAV | OVERALL DIAMETER | 0.219 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.219 INCHES MAXIMUM |
ABHP | OVERALL LENGTH | 0.190 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
ABBH | INCLOSURE MATERIAL | METAL |
ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL JUNCTION TYPE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
TTQY | TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINOR |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
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