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NIIN Output Data

NIIN:
NSN:
Item Name:
TRANSISTOR

Definition:

AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.

Reference/Part Number

Part Number CAGE Status RNCC RNVC DAC RNAAC MSDS SADC
MFE3002N 04713 A C 1 9 TU
007-0145-00 04713 A C 1 4 48
007-0145-00 12115 A C 1 5 48
95-00452-002 00724 A C 1 6 ZZ AC
48P10961D001 94990 R C 1 6 ZZ AC
MFE3002 04713 A 3 2 3 TX
MFE3002 07688 A C 1 5 48

CAGE Information

Code Company
00724 RAYTHEON COMPANY DBA RAYTHEON
04713 FREESCALE SEMICONDUCTOR INC.
12115 DRS ICAS LLC
94990 MOTOROLA INC. DBA INTEGRATED INFORMA
07688 JOINT ELECTRON DEVICE ENGINEERING CO

Federal Supply Class

Title

SEMICONDUCTOR DEVICES AND ASSOCI

Inclusions:

INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.

Exclusions:

EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.

Characteristics (Decoded)

MRC Requirements Statement Clear Text Reply
CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD
CTQX CURRENT RATING PER CHARACTERISTIC 30.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE
ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
AXGY MOUNTING METHOD TERMINAL
ABBH INCLOSURE MATERIAL METAL
ALAT CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) N-CHANNEL JUNCTION TYPE
CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION
CTMZ SEMICONDUCTOR MATERIAL SILICON
CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE
ALAS INTERNAL CONFIGURATION FIELD EFFECT
ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM
CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL

Similar Parts

95-00452-002 , 9500452002 , 5961-00-189-3301 , 5961001893301 , 001893301 , MFE3002N , 007-0145-00 , 007-0145-00 , 95-00452-002 , 48P10961D001 , MFE3002 , MFE3002 ,