NIIN Output Data
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 2N3424 | 80131 | A | 5 | 9 | 5 | TX | ||
| 2601-0250 | 30669 | F | 5 | 9 | 5 | HD | ||
| 2N3424 | 04713 | A | 3 | 2 | 6 | TX | ||
| SSC6879 | 01295 | A | E | 8 | 5 | TX | ||
| RELEASE4815 | 80131 | A | 5 | 1 | 3 | TX | ||
| 2N3424 | 50891 | A | 5 | 1 | 5 | TX | ||
| 2N3424 | 15818 | F | 5 | 9 | E | TX | ||
| 2N3424 | 07263 | A | 5 | 9 | E | TX | ||
| 539010-5 | 96214 | A | E | 8 | 1 | TX |
CAGE Information
| Code | Company |
|---|---|
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
| 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 30669 | E AND R ELECTRONICS INC DBA DUMONT O |
| 04713 | FREESCALE SEMICONDUCTOR INC. |
| 50891 | SEMICONDUCTOR TECHNOLOGY INC DBA S T |
| 15818 | TELCOM SEMICONDUCTOR INC |
| 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 96214 | RAYTHEON COMPANY |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN ALL TRANSISTOR |
| ABBH | INCLOSURE MATERIAL | METAL AND GLASS |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-76 |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 NANOAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET ALL TRANSISTOR |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTRK | TRANSFER RATIO | 120.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
| ABJT | TERMINAL LENGTH | 0.500 INCHES NOMINAL |
| FEAT | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |