NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , DIGITAL
Definition:
A MICROCIRCUIT SPECIFICALLY DESIGNED TO GENERATE, MODIFY, OR PROCESS ELECTRICAL SIGNALS WHICH OPERATE WITH TWO DISTINCT OR BINARY STATES. THESE STATES ARE COMMONLY REFERRED TO AS ON AND OFF, TRUE AND FALSE, HIGH AND LOW, OR "1" AND "0".
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
351-7093-0220PTI0NA | 13499 | A | 3 | 2 | 5 | TX | ||
351-7093-022 OPTION A | 95105 | A | 5 | 2 | 5 | TX | ||
SG14127 | 93332 | H | 5 | 9 | 5 | TX | ||
G141K2 | 3B150 | A | 5 | 2 | 5 | TX | ||
G141K2 | 49956 | A | 5 | 9 | 5 | TX | ||
SC2539FH22A | 04713 | A | 5 | 2 | 5 | TX |
CAGE Information
Code | Company |
---|---|
04713 | FREESCALE SEMICONDUCTOR INC. |
13499 | ROCKWELL COLLINS INC. DBA GOVERNMENT |
95105 | ROCKWELL COLLINS INC. DIV GOVERNMENT |
93332 | SYLVANIA ELECTRIC PRODUCTS INC SEMIC |
3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
49956 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
PRMT | PRECIOUS MATERIAL | GOLD |
AFJQ | STORAGE TEMP RANGE | -65.0/+200.0 DEG CELSIUS |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
CBBL | FEATURES PROVIDED | POSITIVE OUTPUTS AND MEDIUM POWER AND HERMETICALLY SEALED AND MONOLITHIC AND MEDIUM SPEED |
CWSG | TERMINAL SURFACE TREATMENT | GOLD |
CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
TTQY | TERMINAL TYPE AND QUANTITY | 14 FLAT LEADS |
PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
ADAU | BODY HEIGHT | 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
ADAQ | BODY LENGTH | 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | QUAD 2 INPUT |
AEHX | MAXIMUM POWER DISSIPATION RATING | 120.0 MILLIWATTS |
TEST | TEST DATA DOCUMENT | 13499-351-7093 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
ADAT | BODY WIDTH | 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
CSSL | DESIGN FUNCTION AND QUANTITY | 4 GATE, NAND |