NIIN Output Data
NIIN:
NSN:
Item Name:
SEMICONDUCTOR DEVICE SET
Definition:
A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 22-1056 | 21793 | A | C | 1 | 6 | ZZ | AC | |
| 353-3691-030 | 95105 | A | 5 | 2 | 5 | TX | ||
| 353-3691-030 | 13499 | A | 3 | 2 | A | TX | ||
| 353-3691-030 | 95104 | A | C | 1 | 6 | ZZ | AC | |
| 5082-2815 | 28480 | A | 5 | 9 | 5 | TX |
CAGE Information
| Code | Company |
|---|---|
| 13499 | ROCKWELL COLLINS INC. DBA GOVERNMENT |
| 21793 | EADS NORTH AMERICA INC. DBA EADS NOR |
| 95105 | ROCKWELL COLLINS INC. DIV GOVERNMENT |
| 95104 | ALCATEL USA INC. DIV WTPG |
| 28480 | HEWLETT PACKARD CO |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA | COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.068 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| BBJD | FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE AND 41.0 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
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