NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , DIGITAL
Definition:
A MICROCIRCUIT SPECIFICALLY DESIGNED TO GENERATE, MODIFY, OR PROCESS ELECTRICAL SIGNALS WHICH OPERATE WITH TWO DISTINCT OR BINARY STATES. THESE STATES ARE COMMONLY REFERRED TO AS ON AND OFF, TRUE AND FALSE, HIGH AND LOW, OR "1" AND "0".
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| CF546 | 18324 | A | C | 1 | 6 | ZZ | AC | |
| RM8270CJ | 49956 | A | 5 | 9 | 5 | TX | ||
| RM8270CJ/3 | 07933 | A | 5 | 9 | 5 | TX | ||
| SL8270D1 | 58625 | A | 5 | 9 | 6 | TX | ||
| RM8270CJ | 3B150 | A | 5 | 1 | 5 | TX | ||
| SL8270/BAA | 58625 | A | 3 | 2 | 5 | ZZ | ||
| S8270Q | 18324 | A | 5 | 9 | 3 | TX | ||
| N8270Q | 18324 | A | C | 1 | 6 | ZZ | AC |
CAGE Information
| Code | Company |
|---|---|
| 07933 | FAIRCHILD SEMICONDUCTOR CORP SEMICON |
| 18324 | PHILIPS SEMICONDUCTORS INC |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 58625 | LANSDALE SEMICONDUCTOR INC. |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| PRMT | PRECIOUS MATERIAL | GOLD |
| AFJQ | STORAGE TEMP RANGE | -65.0/+200.0 DEG CELSIUS |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-88 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CWSG | TERMINAL SURFACE TREATMENT | GOLD |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 FLAT LEADS |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
| ADAU | BODY HEIGHT | 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM |
| CRHL | BIT QUANTITY (NON-CORE) | 4 |
| CSSL | DESIGN FUNCTION AND QUANTITY | 1 SHIFT REGISTER, PARALLEL AND/OR SERIES OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| ADAQ | BODY LENGTH | 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND SYNCHRONOUS AND W/DECODED OUTPUT AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 247.0 MILLIWATTS |
Similar Parts
RM8270CJ/3 ,
RM8270CJ3 ,
5962-00-430-0095 ,
5962004300095 ,
004300095
,
CF546 ,
RM8270CJ ,
RM8270CJ/3 ,
SL8270D1 ,
RM8270CJ ,
SL8270/BAA ,
S8270Q ,
N8270Q ,