NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| TX2N1893 | 07263 | A | 5 | 9 | 5 | TU | ||
| TX2N1893 | 15818 | F | 3 | 9 | 5 | TA | ||
| RS3325 | 49956 | A | 5 | 9 | 5 | TX | ||
| RS3325 | 3B150 | A | 5 | 1 | 5 | TX | ||
| 004099 | 19156 | A | 1 | 2 | 2 | TA |
CAGE Information
| Code | Company |
|---|---|
| 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 15818 | TELCOM SEMICONDUCTOR INC |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 19156 | MOOG INC. |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTRK | TRANSFER RATIO | 35.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| CTRD | POWER RATING PER CHARACTERISTIC | 800.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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TX2N1893 ,
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004601245
,
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RS3325 ,
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004099 ,