NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
2N3070 | 12040 | F | 5 | 9 | 3 | TX | ||
2N3070 | 11058 | F | 5 | 9 | 3 | TX | ||
2N3070 | 27622 | A | 5 | 9 | 3 | TX | ||
2N3070 | 80131 | A | 3 | 2 | 3 | TX | ||
RELEASE4584 | 80131 | A | 5 | 1 | 3 | TX | ||
2N3070 | 21845 | A | 5 | 2 | 3 | TX | ||
RNC70H4372DS | 81349 | M | C | 1 | 6 | ZZ | AC | |
2N3070 | 17856 | A | 5 | 9 | 3 | TX | ||
2N3070 | 43611 | A | 5 | 2 | 5 | ZZ | ||
17-13389-1 | 04614 | A | C | 1 | 6 | ZZ | AC | |
2N3070 | 15818 | F | 5 | 9 | 3 | TX | ||
2N3070 | 32293 | F | 5 | 9 | 3 | TX | ||
JAN2N3070 | 81349 | M | C | 1 | 6 | ZZ | AC | |
2N3070 | 12954 | A | 5 | 9 | 3 | TX |
CAGE Information
Code | Company |
---|---|
04614 | TEXTRON SYSTEMS CORPORATION DBA TEXT |
12040 | NATIONAL SEMICONDUCTOR CORP |
11058 | CSR INDUSTRIES INC |
27622 | BURNS AND TOWNE INC |
80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
21845 | SOLITRON DEVICES INC. |
81349 | MILITARY SPECIFICATIONS PROMULGATED |
17856 | SILICONIX INCORPORATED DIV SILICONIX |
43611 | MICROSEMI CORP. - MASSACHUSETTS DBA |
15818 | TELCOM SEMICONDUCTOR INC |
32293 | INTERSIL INC SUB OF GENERAL ELECTRIC |
12954 | MICROSEMI CORP.-SCOTTSDALE DBA MICRO |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
AXGY | MOUNTING METHOD | TERMINAL |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
ABBH | INCLOSURE MATERIAL | METAL |
ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL JUNCTION TYPE |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINOR |
CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE4584 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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