NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , DIGITAL
Definition:
A MICROCIRCUIT SPECIFICALLY DESIGNED TO GENERATE, MODIFY, OR PROCESS ELECTRICAL SIGNALS WHICH OPERATE WITH TWO DISTINCT OR BINARY STATES. THESE STATES ARE COMMONLY REFERRED TO AS ON AND OFF, TRUE AND FALSE, HIGH AND LOW, OR "1" AND "0".
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
RX4944 | 49956 | A | 5 | 9 | 5 | TX | ||
SNG191J | 01295 | A | 5 | 1 | 5 | TX | ||
481023-1 | 01295 | A | 5 | 2 | 5 | TX | ||
RX4944 | 3B150 | A | 5 | 2 | 5 | TX | ||
481023-1 | 3B150 | A | 3 | 2 | 1 | TX | ||
MC562L | 04713 | A | 5 | 1 | 3 | TX | ||
RG191D | 3B150 | A | 5 | 1 | 3 | TX | ||
481023-1 | 49956 | A | 5 | 9 | 1 | TX | ||
RG191D | 49956 | A | 5 | 9 | 3 | TX | ||
481023-1 | 04713 | A | 5 | 9 | 5 | TX |
CAGE Information
Code | Company |
---|---|
01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
49956 | RAYTHEON COMPANY DBA RAYTHEON |
3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
04713 | FREESCALE SEMICONDUCTOR INC. |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CQZP | INPUT CIRCUIT PATTERN | TRIPLE 3 INPUT |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
CSSL | DESIGN FUNCTION AND QUANTITY | 3 GATE, NAND-NOR |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CWSG | TERMINAL SURFACE TREATMENT | TIN |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
TEST | TEST DATA DOCUMENT | 49956-481023 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
AEHX | MAXIMUM POWER DISSIPATION RATING | 50.0 MILLIWATTS |
ADAQ | BODY LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |