NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
NS1712 | 12040 | F | 5 | 9 | 6 | TX | ||
2469939-2 | 10001 | A | 3 | 2 | 1 | TX | ||
ST3072 | 03877 | A | 5 | 9 | 6 | TX | ||
2469939-2 | 3B150 | A | 5 | 2 | 1 | TX | ||
2469939-2 | 49956 | A | 5 | 9 | 1 | TX | ||
2469939-2 | 12040 | F | 5 | 9 | 5 | TX |
CAGE Information
Code | Company |
---|---|
03877 | GILBERT ENGINEERING CO INC/INCON SUB |
12040 | NATIONAL SEMICONDUCTOR CORP |
10001 | NAVAIR AND NAVSEA MANAGED ORIGINAL D |
3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
49956 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
ADAV | OVERALL DIAMETER | 0.360 INCHES NOMINAL |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
ABBH | INCLOSURE MATERIAL | METAL |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
CTRD | POWER RATING PER CHARACTERISTIC | 150.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
ABHP | OVERALL LENGTH | 0.250 INCHES NOMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |