NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 701M | 07263 | A | 5 | 1 | 5 | TX | ||
| 2327144-1 | 07038 | A | 7 | 2 | 1 | TX | ||
| 472-0009-001 | 07263 | A | 5 | 9 | 5 | TX | ||
| 472-0009-001 | 94756 | A | 3 | 2 | 1 | TA | ||
| 701M | 01295 | A | 5 | 1 | 5 | TX | ||
| 701M | 3B150 | A | 5 | 1 | 5 | TX | ||
| DMS 76001B | 16236 | A | 5 | 9 | 9 | TX | ||
| 701M | 49956 | A | 5 | 9 | 5 | TX |
CAGE Information
| Code | Company |
|---|---|
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
| 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 07038 | BENDIX CORP THE BENDIX AEROSPACE SYS |
| 94756 | BOEING COMPANY, THE DIV DEFENSE, SPA |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 16236 | DLA LAND AND MARITIME |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE GOLD |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| PRMT | PRECIOUS MATERIAL | GOLD |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 600.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINIMUM AND 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.2 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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