NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 723001-012 | 05869 | A | 5 | 2 | 2 | TX | ||
| 2N439 | 96214 | A | 5 | 9 | 3 | TX | ||
| 2N439 | 14936 | A | 5 | 9 | 3 | TX | ||
| N2088262-10 | 27914 | A | 5 | 2 | 4 | ZG | ||
| 2N439 | 01295 | A | 5 | 9 | 3 | TX | ||
| RELEASE2064 | 80131 | A | 5 | 1 | 3 | TX | ||
| 723001-012 | 82577 | A | 5 | 2 | 2 | TX | ||
| 2N439 | 80131 | A | 3 | 2 | 3 | TX | ||
| N2088262-10 | 06845 | A | 5 | 9 | 4 | ZG | ||
| DMS 76001B | 16236 | A | 5 | 9 | 9 | TX | ||
| SMC417159 | 80063 | A | 5 | 2 | 2 | TX | ||
| 2N439 | 12045 | F | 5 | 9 | 3 | TX |
CAGE Information
| Code | Company |
|---|---|
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
| 05869 | RAYTHEON COMPANY DBA RAYTHEON |
| 96214 | RAYTHEON COMPANY |
| 14936 | GENERAL SEMICONDUCTOR INC |
| 27914 | HONEYWELL INTERNATIONAL INC DBA HONE |
| 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 82577 | RAYTHEON COMPANY DBA RAYTHEON |
| 06845 | RAYTHEON COMPANY DBA RAYTHEON |
| 16236 | DLA LAND AND MARITIME |
| 80063 | US ARMY COMMUNICATIONS & ELECTRONICS |
| 12045 | ELECTRONIC TRANSISTORS CORP |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| AXGY | MOUNTING METHOD | TERMINAL |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
| CTRD | POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | GERMANIUM |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE2064 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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