NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| S82S129W | 18324 | A | 5 | 1 | 3 | TX | ||
| SN54S287W | 01295 | A | 5 | 1 | 3 | TX | ||
| DH75681-4 | 34335 | A | 5 | 9 | 5 | KE | ||
| HM9-7611-2 | 34371 | A | 5 | 9 | 3 | TX | ||
| 17639 | 50364 | F | 5 | 9 | 5 | TX | ||
| SN92785W | 01295 | A | 5 | 9 | 5 | KE | ||
| B2054-4 | 34371 | A | 5 | 2 | 5 | TX | ||
| HR10804 | 07263 | A | 5 | 9 | 5 | KE | ||
| CC5193-4 | 18324 | A | 5 | 2 | 5 | TX | ||
| ROM/PROM FAMILY 015 | 16236 | A | 5 | 1 | 5 | TX | ||
| MM5301-1F | 50364 | F | 5 | 1 | 3 | TX | ||
| 932820-4 | 82577 | A | 3 | 2 | 3 | TX |
CAGE Information
| Code | Company |
|---|---|
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
| 18324 | PHILIPS SEMICONDUCTORS INC |
| 34335 | ADVANCED MICRO DEVICES, INC. DBA A M |
| 34371 | INTERSIL CORPORATION |
| 50364 | MMI/AMD |
| 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 16236 | DLA LAND AND MARITIME |
| 82577 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CBBL | FEATURES PROVIDED | W/ENABLE AND W/BUFFERED OUTPUT AND EXPANDABLE AND HIGH SPEED AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND PROGRAMMED AND PROGRAMMABLE AND W/STORAGE AND POSITIVE OUTPUTS AND MONOLITHIC AND HERMETICALLY SEALED AND W/DECODED OUTPUT AND W/DISABLE |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| TEST | TEST DATA DOCUMENT | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CRHL | BIT QUANTITY (NON-CORE) | 1024 |
| ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CSWJ | WORD QUANTITY (NON-CORE) | 256 |
Similar Parts
SN54S287W ,
SN54S287W ,
5962-01-076-6621 ,
5962010766621 ,
010766621
,
S82S129W ,
SN54S287W ,
DH75681-4 ,
HM9-7611-2 ,
17639 ,
SN92785W ,
B2054-4 ,
HR10804 ,
CC5193-4 ,
ROM/PROM FAMILY 015 ,
MM5301-1F ,
932820-4 ,