NIIN Output Data
NIIN:
NSN:
Item Name:
SEMICONDUCTOR DEVICE SET
Definition:
A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
352-1090-240 | 1BAM3 | A | 5 | 2 | 5 | ZZ | ||
44004 | 58135 | H | 5 | 9 | 5 | TX | ||
352-1090-240 | 13499 | A | 3 | 2 | A | 9Z | ||
SRF820Q | 04713 | A | 5 | 1 | 6 | ZZ | ||
352-1090-080 | 13499 | A | C | 1 | A | TX | AF | |
44004 | 0PJR2 | A | 5 | 2 | 5 | ZZ | ||
CD2867 | 50155 | A | C | 1 | 6 | TX | AF | |
352-1090-240 | 95105 | A | 5 | 1 | 5 | TX | ||
SRF820HQ | 04713 | A | 5 | 9 | 6 | TX | ||
1468-15 | 57962 | A | 5 | 2 | 5 | ZZ | ||
J02046R | 01281 | F | 5 | 9 | 5 | 9Z |
CAGE Information
Code | Company |
---|---|
01281 | TRW ELECTRONICS AND DEFENSE SECTOR R |
1BAM3 | SYNERGETIC TECHNOLOGIES GROUP INC. |
58135 | ACRIAN INC |
13499 | ROCKWELL COLLINS INC. DBA GOVERNMENT |
04713 | FREESCALE SEMICONDUCTOR INC. |
0PJR2 | MICROSEMI CORP.-RF POWER PRODUCTS DI |
50155 | VARIAN ASSOCIATES INC COMMUNICATIONS |
95105 | ROCKWELL COLLINS INC. DIV GOVERNMENT |
57962 | STMICROELECTRONICS INC |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CTRD | POWER RATING PER CHARACTERISTIC | 140.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR |
FEAT | SPECIAL FEATURES | CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES. |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR AND 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
ABKW | OVERALL HEIGHT | 0.300 INCHES MAXIMUM ALL TRANSISTOR |
ABHP | OVERALL LENGTH | 0.980 INCHES MAXIMUM ALL TRANSISTOR |
ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
TEST | TEST DATA DOCUMENT | 13499-352-1090 DRAWING |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 6 RIBBON ALL TRANSISTOR |
ABBH | INCLOSURE MATERIAL | CERAMIC ALL TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM ALL TRANSISTOR AND 8.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR |
ABMK | OVERALL WIDTH | 0.865 INCHES MAXIMUM ALL TRANSISTOR |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
BBJD | FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
AKPV | MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
AXGY | MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
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