NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
MK31000P | 50088 | A | 5 | 1 | 3 | TX | ||
1818-0264 | 1LQK8 | A | 3 | 2 | 5 | ZZ | ||
1818-0264 | 50088 | A | 5 | 2 | 5 | TX | ||
SYC2316A | 55576 | F | 5 | 1 | 3 | TX | ||
C27105 | 55576 | F | 5 | 9 | 5 | TX | ||
SYNC2316AMASKED | 55576 | F | 5 | 9 | 5 | TX | ||
1818-0264 | 28480 | A | 5 | 9 | 3 | TX |
CAGE Information
Code | Company |
---|---|
1LQK8 | AGILENT TECHNOLOGIES INC. DIV AGILEN |
50088 | STMICROELECTRONICS INC |
55576 | SYNERTEK |
28480 | HEWLETT PACKARD CO |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
CZEQ | TIME RATING PER CHACTERISTIC | 550.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 550.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -0.0/+70.0 DEG CELSIUS |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND PROGRAMMABLE AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MONOLITHIC AND HIGH PERFORMANCE AND 3-STATE OUTPUT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
ADAT | BODY WIDTH | 0.590 INCHES MINIMUM AND 0.625 INCHES MAXIMUM |
CRHL | BIT QUANTITY (NON-CORE) | 16384 |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CSWJ | WORD QUANTITY (NON-CORE) | 2048 |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CZER | MEMORY DEVICE TYPE | ROM |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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