NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
952641 | 49956 | A | 5 | 9 | 1 | HD | ||
952641-103B | 49956 | A | 5 | 9 | 1 | HD | ||
952641 | 3B150 | A | 7 | 1 | 1 | HD | ||
952641-103B | 3B150 | A | 3 | 2 | 1 | HD | ||
S82S115F1883B | 18324 | A | 5 | 1 | 5 | HD | ||
ROM/PROM FAMILY 032 | 16236 | A | 5 | 1 | 9 | ZZ | ||
952641-103 | 49956 | A | C | 1 | 6 | ZZ | AC |
CAGE Information
Code | Company |
---|---|
16236 | DLA LAND AND MARITIME |
49956 | RAYTHEON COMPANY DBA RAYTHEON |
3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
18324 | PHILIPS SEMICONDUCTORS INC |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.225 INCHES MAXIMUM |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | GOLD |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
CRHL | BIT QUANTITY (NON-CORE) | 4096 |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQSJ | INCLOSURE MATERIAL | SILICON |
CSWJ | WORD QUANTITY (NON-CORE) | 512 |
CZER | MEMORY DEVICE TYPE | ROM |
CBBL | FEATURES PROVIDED | BIPOLAR AND HERMETICALLY SEALED AND PROGRAMMED AND MONOLITHIC AND W/STROBE AND 3-STATE OUTPUT |