NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| STA2089 | 07256 | A | C | 1 | 1 | ZZ | AC | |
| PT12006 | 54648 | F | 5 | 9 | 5 | TX | ||
| ST-4092 | 50891 | A | 5 | 1 | 5 | TX | ||
| PP7984 | 33178 | A | 5 | 1 | 6 | TX | ||
| PC71597-1 | 01281 | F | 5 | 1 | 5 | TX | ||
| PC71597,1 | 64039 | A | 5 | 2 | 5 | ZZ | ||
| YY0079 | 21845 | A | 5 | 2 | 5 | TX | ||
| PC71597-1 | 09344 | A | 3 | 2 | 1 | TX | ||
| PC71597-1 | 04713 | A | 5 | 1 | 5 | TX |
CAGE Information
| Code | Company |
|---|---|
| 01281 | TRW ELECTRONICS AND DEFENSE SECTOR R |
| 07256 | SILICON TRANSISTOR CORP SUB OF BBF I |
| 54648 | MICROSEMI CORP POWER TECHNOLOGY COMP |
| 50891 | SEMICONDUCTOR TECHNOLOGY INC DBA S T |
| 33178 | MICROSEMI PPC INC |
| 64039 | HYBRID SEMICONDUCTORS & ELECTRONICS |
| 21845 | SOLITRON DEVICES INC. |
| 09344 | ROCKWELL COLLINS AEROSPACE & ELECTRO |
| 04713 | FREESCALE SEMICONDUCTOR INC. |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQX | CURRENT RATING PER CHARACTERISTIC | 15.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 1.50 AMPERES SOURCE CUTOFF CURRENT MINIMUM |
| TEST | TEST DATA DOCUMENT | 09344-PC71597 DRAWING |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 UNINSULATED WIRE LEAD |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| PRMT | PRECIOUS MATERIAL | GOLD |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| CTRD | POWER RATING PER CHARACTERISTIC | 100.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| ADAV | OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| ABBH | INCLOSURE MATERIAL | METAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| ABHP | OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 10.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| PMLC | PRECIOUS MATERIAL AND LOCATION | LEADS GOLD |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |