NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| ROM/PROM FAMILY 030 | 16236 | A | 5 | 1 | 5 | TX | ||
| SN82S137J | 01295 | A | 5 | 1 | 3 | TX | ||
| 12294049-4 | 19207 | A | 3 | 2 | 1 | TX | ||
| M38510/20602BVA | 81349 | M | 5 | 1 | E | TX | ||
| 3619850 TABLE 3 | 82577 | A | 5 | 2 | 5 | TX |
CAGE Information
| Code | Company |
|---|---|
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
| 16236 | DLA LAND AND MARITIME |
| 19207 | U S ARMY TANK AUTOMOTIVE COMMAND AMS |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 82577 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| AGAV | END ITEM IDENTIFICATION | 1430-01-085-5522 19207 |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND 3-STATE OUTPUT |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
| CRHL | BIT QUANTITY (NON-CORE) | 4096 |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CZER | MEMORY DEVICE TYPE | PROM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| CSWJ | WORD QUANTITY (NON-CORE) | 1024 |
| ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |