NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 2N5039 | 34371 | A | 5 | 1 | 6 | TX | ||
| 2N5039 | 01281 | F | 5 | 1 | 6 | TX | ||
| 2N5039 | 33178 | A | 5 | 1 | 6 | TX | ||
| 2N5039 | 01295 | A | 5 | 1 | 6 | TX | ||
| 2N5039 | 12969 | A | 5 | 1 | 6 | TX | ||
| 20-00904-008 | 00724 | A | 3 | 2 | 6 | TX | ||
| 2N5039 | 07256 | A | 5 | 1 | 6 | TX |
CAGE Information
| Code | Company |
|---|---|
| 00724 | RAYTHEON COMPANY DBA RAYTHEON |
| 34371 | INTERSIL CORPORATION |
| 01281 | TRW ELECTRONICS AND DEFENSE SECTOR R |
| 33178 | MICROSEMI PPC INC |
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
| 12969 | MICRO USPD INC |
| 07256 | SILICON TRANSISTOR CORP SUB OF BBF I |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CTRK | TRANSFER RATIO | 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| ABKW | OVERALL HEIGHT | 0.350 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 50.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET |
| ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 140.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
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