NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
9324213 | 19203 | A | 3 | 2 | A | TX | ||
RCA67199 | 34371 | A | 5 | 9 | 5 | TX | ||
HY58-007 | 0ANM4 | A | 5 | 1 | 5 | ZZ |
CAGE Information
Code | Company |
---|---|
0ANM4 | HYTEK MICROSYSTEMS INC. |
19203 | PICATINNY ARSENAL |
34371 | INTERSIL CORPORATION |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
ABBH | INCLOSURE MATERIAL | METAL |
CTQX | CURRENT RATING PER CHARACTERISTIC | -10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND -0.25 AMPERES SOURCE CUTOFF CURRENT MINIMUM |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, RESISTANCE BETWEEN BASE AND EMITTER AND -60.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CTRK | TRANSFER RATIO | 20.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
AYQS | TERMINAL CIRCLE DIAMETER | 0.210 INCHES MAXIMUM |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |