NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 5962-3850309BRA | 81349 | M | 5 | 1 | E | TX | ||
| PAL16L2 | 50364 | F | C | 1 | 5 | TX | AF | |
| ROM/PROM | 16236 | A | 5 | 1 | 5 | TX | ||
| M38510/50309BRA | 81349 | M | 2 | 2 | E | TX | ||
| M38510-50309BRB | 81349 | M | 5 | 9 | E | TX | ||
| M38510-50309BRC | 81349 | M | 5 | 9 | E | TX | ||
| DMPAL16L2MJ/883B | 27014 | A | C | 1 | 5 | TX | AF | |
| 5962-3850309BRB | 81349 | M | 5 | 9 | E | TX | ||
| 5962-3850309BRX | 81349 | M | 5 | 9 | E | TX | ||
| MIL-M-38510/503 | 81349 | M | 4 | 1 | E | TX | ||
| PAL16L2 | 27014 | A | C | 1 | 5 | TX | AF |
CAGE Information
| Code | Company |
|---|---|
| 16236 | DLA LAND AND MARITIME |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 50364 | MMI/AMD |
| 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CZER | MEMORY DEVICE TYPE | PAL |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMABLE AND BIPOLAR |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |