NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 7110358-001 | 93322 | A | 5 | 2 | A | TX | ||
| IRFF9120 | 59993 | C | 5 | 2 | 4 | TX | ||
| 04ES053-001 | 24587 | A | 3 | 2 | A | TX |
CAGE Information
| Code | Company |
|---|---|
| 24587 | RAYTHEON CO ESD LONG ISLAND DIV |
| 93322 | GE AVIATION SYSTEMS LLC DBA GE AVIAT |
| 59993 | INTERNATIONAL RECTIFIER CORPORATION |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| TEST | TEST DATA DOCUMENT | 24587-04ES053 DRAWING |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE AND -16.00 AMPERES FORWARD CURRENT, AVERAGE ANY ACCEPTABLE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.205 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| CTRD | POWER RATING PER CHARACTERISTIC | 20.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | P-CHANNEL INSULATED GATE TYPE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
Similar Parts
04ES053-001 ,
04ES053001 ,
5961-01-221-8227 ,
5961012218227 ,
012218227
,
7110358-001 ,
IRFF9120 ,
04ES053-001 ,