NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| AM27256-2DC | 59350 | A | E | 8 | 3 | ZZ | ||
| 1354774 | 82577 | A | C | 1 | 1 | ZZ | AC | |
| MIL-M-38510/224 | 81349 | M | 4 | 1 | E | TX | ||
| AM27256-20/BXA | 34335 | A | C | 1 | 5 | TX | AF | |
| ROM/PROM | 16236 | A | E | 8 | 6 | TX | ||
| M38510/22402BYX | 81349 | M | C | 1 | 6 | ZZ | AC | |
| ROM/PROM HEAD 072 | 16236 | A | 5 | 1 | 5 | TX | ||
| AM27256-30DC | 34649 | A | C | 1 | 6 | ZZ | AC | |
| M38510/22402BYA | 81349 | M | 2 | 2 | E | TX | ||
| D27256-2 | 7U050 | A | E | 8 | E | TX | ||
| AM27256-2DC | 34335 | A | E | 8 | 4 | 9Z |
CAGE Information
| Code | Company |
|---|---|
| 16236 | DLA LAND AND MARITIME |
| 59350 | INCON INC. |
| 82577 | RAYTHEON COMPANY DBA RAYTHEON |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 34335 | ADVANCED MICRO DEVICES, INC. DBA A M |
| 34649 | INTEL CORP SALES OFFICE |
| 7U050 | INTEL CORP FIELD SALES OFFICE FS020 |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CBBL | FEATURES PROVIDED | ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/224 GOVERNMENT SPECIFICATION |
| CQZP | INPUT CIRCUIT PATTERN | 23 INPUT |
| CZER | MEMORY DEVICE TYPE | EPROM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.2 VOLTS MAXIMUM POWER SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CSWJ | WORD QUANTITY (NON-CORE) | 32768 |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| ADAU | BODY HEIGHT | 0.217 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| CRHL | BIT QUANTITY (NON-CORE) | 262144 |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS NOMINAL ACCESS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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,
AM27256-2DC ,
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