NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| A3029298 | 80063 | A | 3 | 2 | A | TX | ||
| NSFJ9110 | 43611 | A | 3 | 2 | 5 | ZZ | ||
| IRFF9110 | 59993 | C | 5 | 2 | A | TX | ||
| SML3P10 | 17856 | A | 5 | 1 | E | TX | ||
| 2052AS176-01 | 30003 | A | 7 | 2 | 5 | ZZ | ||
| JANTX2N6845 | 81349 | M | 5 | 1 | E | TX |
CAGE Information
| Code | Company |
|---|---|
| 17856 | SILICONIX INCORPORATED DIV SILICONIX |
| 80063 | US ARMY COMMUNICATIONS & ELECTRONICS |
| 43611 | MICROSEMI CORP. - MASSACHUSETTS DBA |
| 59993 | INTERNATIONAL RECTIFIER CORPORATION |
| 30003 | NAVAL AIR SYSTEMS COMMAND |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ADAV | OVERALL DIAMETER | 0.360 INCHES NOMINAL |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -2.60 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE AND -10.00 AMPERES FORWARD CURRENT, AVERAGE ANY ACCEPTABLE |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABBH | INCLOSURE MATERIAL | METAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | P-CHANNEL INSULATED GATE TYPE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABJT | TERMINAL LENGTH | 0.560 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| CTRD | POWER RATING PER CHARACTERISTIC | 15.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| ABHP | OVERALL LENGTH | 0.180 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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SML3P10 ,
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012735348
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A3029298 ,
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IRFF9110 ,
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2052AS176-01 ,
JANTX2N6845 ,