NIIN Output Data
NIIN:
NSN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
6011573-001 | 12436 | A | 3 | 2 | A | TX | ||
FN5014 | 17856 | A | 5 | 2 | 5 | TX | ||
U310 | 17856 | A | 5 | 1 | 5 | TX |
CAGE Information
Code | Company |
---|---|
12436 | BAE SYSTEMS NATIONAL SECURITY SOLUTI |
17856 | SILICONIX INCORPORATED DIV SILICONIX |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
AGAV | END ITEM IDENTIFICATION | ARLEIGH BURKE CLASS DDG, AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS, 2M/ATE MICROMINAUTURE AUTOMATIC TEST EQUIPMENT. SUPPLY CLASS AOE, WHIDBEY ISLAND CLASS LSD, OLIVER PERRY CLASS FFG, TICONDEROGA CLASS CG (47), SPRUANCE CLASS DD (963). F-16 AIRCRAFT. |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINOR |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ABHP | OVERALL LENGTH | 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
ABBH | INCLOSURE MATERIAL | METAL |
ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL JUNCTION TYPE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
FEAT | SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL. SELCTED FOR SATURATION DRAIN CURRENT MIN 36, MAX 52 MILLIAMPS AT VDS=10, AMBIENT TEMP 25C. |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -2.5 MINIMUM GATE TO SOURCE CUTOFF VOLTAGE AND -25.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND -6.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND BURN IN AND ELECTROSTATIC SENSITIVE |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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6011573-001 ,
6011573001 ,
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5961012736732 ,
012736732
,
6011573-001 ,
FN5014 ,
U310 ,