NIIN Output Data
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 582R191H02 | 97942 | A | 3 | 2 | A | TX | ||
| SA2668 | 3B150 | A | 5 | 1 | 5 | TX | ||
| SP2222AQD | 49956 | A | 5 | 9 | 5 | TX | ||
| SA2668 | 49956 | A | 5 | 9 | 5 | TX | ||
| SP2222AQD | 3B150 | A | 5 | 1 | 5 | TX |
CAGE Information
| Code | Company |
|---|---|
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATION |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC ALL TRANSISTOR AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR |
| ABMK | OVERALL WIDTH | 0.280 INCHES MAXIMUM |
| ABBH | INCLOSURE MATERIAL | CERAMIC |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.50 AMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR |
| ABJT | TERMINAL LENGTH | 0.280 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PIN |
| ABKW | OVERALL HEIGHT | 0.120 INCHES MAXIMUM |
| ABHP | OVERALL LENGTH | 0.280 INCHES MAXIMUM |
| FEAT | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |