NIIN Output Data
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 94-6096 | 59993 | C | 5 | 1 | 5 | ZZ | ||
| NH743C4510-01-020 | 16236 | A | 5 | 1 | 5 | ZZ | ||
| JANTXV2N7334 | 59993 | C | 5 | 1 | E | ZZ | ||
| 743C4510-01-020 | 86360 | A | 3 | 2 | A | MF | ||
| JANTX2N7334 | 59993 | C | C | 1 | 6 | ZZ | AC | |
| V11882Q | 17856 | A | 5 | 1 | 5 | ZZ |
CAGE Information
| Code | Company |
|---|---|
| 16236 | DLA LAND AND MARITIME |
| 59993 | INTERNATIONAL RECTIFIER CORPORATION |
| 86360 | GE AVIATION SYSTEMS LLC DBA GE AVIAT |
| 17856 | SILICONIX INCORPORATED DIV SILICONIX |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABHP | OVERALL LENGTH | 0.785 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| ABBH | INCLOSURE MATERIAL | CERAMIC |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| TEST | TEST DATA DOCUMENT | 86360-743C4510-01 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| ABMK | OVERALL WIDTH | 0.320 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PIN |
| ABJT | TERMINAL LENGTH | 0.125 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE ALL TRANSISTOR AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR |