NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| MIL-M-38510/204 | 81349 | M | 4 | 1 | E | TX | ||
| M38510/20404BFA | 81349 | M | 2 | 2 | E | TX | ||
| M38510/20404BFX | 81349 | M | C | 1 | 6 | ZZ | AC | |
| 5962-3820404BFA | 81349 | M | 5 | 1 | E | TX | ||
| 5962-3820404BFB | 81349 | M | 5 | 9 | E | TX | ||
| 5962-3820404BFX | 81349 | M | 5 | 9 | E | TX | ||
| ROM/PROM | 16236 | A | 5 | 1 | 6 | TX |
CAGE Information
| Code | Company |
|---|---|
| 16236 | DLA LAND AND MARITIME |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION |
| CRHL | BIT QUANTITY (NON-CORE) | 2048 |
| CBBL | FEATURES PROVIDED | SCHOTTKY AND MONOLITHIC AND BIPOLAR |
| ADAT | BODY WIDTH | 0.285 INCHES MAXIMUM |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | F-5 MIL-M-38510 |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
| ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
| CSWJ | WORD QUANTITY (NON-CORE) | 512 |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/204 GOVERNMENT SPECIFICATION |