NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 1212249-218 | 56232 | A | 5 | 9 | A | TX | ||
| 1212249-218 | 03538 | A | 3 | 2 | A | TX | ||
| M38510/504074BRA | 81349 | M | 5 | 1 | E | TX | ||
| ROM/PROM FAMILY 109 | 16236 | A | 5 | 1 | 5 | TX |
CAGE Information
| Code | Company |
|---|---|
| 03538 | LOCKHEED MARTIN CORPORATION DBA MS2 |
| 56232 | LOCKHEED MARTIN CORPORATION DBA LOCK |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 16236 | DLA LAND AND MARITIME |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD |
| AGAV | END ITEM IDENTIFICATION | AN/FPS-124 (SSRADAR) |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| ZZZW | DEPARTURE FROM CITED DOCUMENT | ALTERED BY PROGRAMMING,MARKING & TESTING |
| ZZZK | SPECIFICATION/STANDARD DATA | 56232-1212249 MANUFACTURERS SPECIFICATION CONTROL |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POSITIVE POWER SUPPLY SPAN AND 12.0 VOLTS MAXIMUM TOTAL SUPPLY AND -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CZER | MEMORY DEVICE TYPE | PAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| ZZZT | NONDEFINITIVE SPEC/STD DATA | 218 NUMBER |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL BIPOLAR,PROGRAMMABLE LOGIC,MONOLITHIC SILICON |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |