NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| MMI6301-J | 34335 | A | 5 | 9 | E | TX | ||
| PR979738-114 | 3B150 | A | 5 | 1 | 5 | TX | ||
| PR979738-114 | 49956 | A | 5 | 9 | 5 | TX | ||
| 979738-114 | 3B150 | A | 3 | 2 | A | TX | ||
| 979738-114 | 49956 | A | 5 | 9 | A | TX | ||
| ROM/PROM | 16236 | A | 5 | 1 | 9 | TX | ||
| DM54S287J/883 | 27014 | A | 5 | 9 | E | TX |
CAGE Information
| Code | Company |
|---|---|
| 16236 | DLA LAND AND MARITIME |
| 34335 | ADVANCED MICRO DEVICES, INC. DBA A M |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 1024-BIT BIPOLAR(256X4) ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | PROGRAMMED AND BIPOLAR AND LOW POWER AND ELECTRICALLY ALTERABLE AND HIGH RELIABILITY |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CRHL | BIT QUANTITY (NON-CORE) | 1024 |
| ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 49956-979738-114 |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZER | MEMORY DEVICE TYPE | EEPROM |
Similar Parts
ROM/PROM ,
ROMPROM ,
5962-01-373-9120 ,
5962013739120 ,
013739120
,
MMI6301-J ,
PR979738-114 ,
PR979738-114 ,
979738-114 ,
979738-114 ,
ROM/PROM ,
DM54S287J/883 ,