NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
M38510/20604BVX | 81349 | M | 5 | 9 | E | TX | ||
MIL-M-38510/206 | 81349 | M | 4 | 1 | E | TX | ||
MIS-28685 | 3B150 | A | E | 8 | 6 | BD | ||
M38510/20604BVA | 81349 | M | 2 | 2 | E | TX | ||
ROM/PROM HEAD 202 | 16236 | A | 5 | 1 | 9 | ZZ | ||
MIS-28685 | 49956 | A | E | 8 | 6 | BD | ||
MIS-28685 | 18876 | A | E | 8 | 3 | BD | ||
M38510/20604BVB | 81349 | M | 5 | 9 | E | TX |
CAGE Information
Code | Company |
---|---|
16236 | DLA LAND AND MARITIME |
81349 | MILITARY SPECIFICATIONS PROMULGATED |
3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
49956 | RAYTHEON COMPANY DBA RAYTHEON |
18876 | U S ARMY AVIATION AND MISSILE COMMAN |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
ADAU | BODY HEIGHT | 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
ADAR | BODY OUTSIDE DIAMETER | 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
CTQX | CURRENT RATING PER CHARACTERISTIC | 140.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND PROGRAMMED |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
CRHL | BIT QUANTITY (NON-CORE) | 4096 |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |