NIIN Output Data
NIIN:
NSN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| M38510/29307BYB | 81349 | M | 5 | 9 | E | ZZ | ||
| M38510/29307BYX | 81349 | M | 5 | 9 | E | ZZ | ||
| G492096-233 | 49956 | A | 5 | 9 | 5 | ZZ | ||
| IDT71256S55TCB | 61772 | A | 5 | 1 | E | ZZ | ||
| G492096-233 | 3B150 | A | E | 8 | 5 | ZZ | ||
| CY7C199-55DMB | 65786 | A | 5 | 1 | E | ZZ | ||
| M38510/29307BYA | 81349 | M | E | 8 | E | ZZ | ||
| L7C199DMB55 | 65896 | A | 5 | 1 | E | ZZ | ||
| 5962-88662 | 67268 | A | 4 | 1 | E | ZZ | ||
| MIL-M-38510/293 | 81349 | M | E | 8 | E | ZZ | ||
| 5962-8866203NB | 67268 | A | 5 | 9 | E | ZZ | ||
| 5962-8866203NC | 67268 | A | 5 | 9 | E | ZZ | ||
| 5962-8866203NX | 67268 | A | 5 | 9 | E | ZZ | ||
| PDM41256S55DB | 0K6N4 | A | 5 | 1 | E | ZZ | ||
| EDI8834C55QB | 66301 | F | 5 | 1 | E | ZZ | ||
| MT5C2568C-55883C | 6Y440 | A | 5 | 1 | E | ZZ | ||
| 5962-8866203NA | 67268 | A | 2 | 2 | E | ZZ |
CAGE Information
| Code | Company |
|---|---|
| 0K6N4 | PARADIGM TECHNOLOGY INC |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 65786 | CYPRESS SEMICONDUCTOR CORPORATION |
| 65896 | LOGIC DEVICES INCORPORATED |
| 67268 | DLA LAND AND MARITIME OPNS SUPPORT G |
| 66301 | WHITE ELECTRONIC DESIGNS CORP DIV CO |
| 6Y440 | MICRON TECHNOLOGY INC. |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQX | CURRENT RATING PER CHARACTERISTIC | 105.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE MEGAHERTZ |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM ACCESS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 11.00 INPUT PICOFARADS MAXIMUM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| ADAQ | BODY LENGTH | 1.485 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
Similar Parts
PDM41256S55DB ,
PDM41256S55DB ,
5962-01-406-2375 ,
5962014062375 ,
014062375
,
M38510/29307BYB ,
M38510/29307BYX ,
G492096-233 ,
IDT71256S55TCB ,
G492096-233 ,
CY7C199-55DMB ,
M38510/29307BYA ,
L7C199DMB55 ,
5962-88662 ,
MIL-M-38510/293 ,
5962-8866203NB ,
5962-8866203NC ,
5962-8866203NX ,
PDM41256S55DB ,
EDI8834C55QB ,
MT5C2568C-55883C ,
5962-8866203NA ,