Part Number
Definition:
TWO OR MORE DIODE SEMICONDUCTOR DEVICES DESIGNED TO FUNCTION AS A UNIT IN CHANGING ALTERNATING CURRENT TO DIRECT CURRENT. THE DIODE DEVICES ARE INTERNALLY CONNECTED IN SERIES, AND ARE PERMANENTLY CASED, ENCAPSULATED, POTTED, OR MOLDED TOGETHER TO FORM AN INSEPARABLE UNIT. THESE UNITS MAY BE DESIGNED AS EITHER HALF-WAVE OR FULL-WAVE RECTIFIERS AND MAY BE MOUNTED TO FORM EITHER SINGLE PHASE OR THREE PHASE BRIDGES. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FABRICATED IN THE FORM OF A MONOLITHIC OR THIN FILM STRUCTURE THAT PERFORM THE FUNCTION OF A CIRCUIT, SEE INTEGRATED CIRCUIT (AS MODIFIED). EXCLUDES SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; AND RECTIFIER NETWORK, UNITIZED.
CAGE Information
| Code | Company |
|---|---|
| 93568 | HARSCO CORP BMY-COMBAT SYSTEMS DIV |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| FEAT | SPECIAL FEATURES | 2 AMP NON-CONTROLLED AVALANCHE VOLTAGE,400V PEAK INVERSE AND DC BLOCKING VOLTAGE,280V WORKING VOLTAGE,FULL WAVE EPOXY BRIDGE RECTIFIER,M50 TO P150 DEG C OPERATING AND STORAGE TEMP RANGE,CASE 0.600 IN. LG;0.600 IN. W;0.200 IN. H;FOUR WIRE LEAD TERMINALS 1.000 IN. MIN LG SPACED ON 0.425 IN. BY 0.425 IN. MTG CENTERS |
| FEAT | SPECIAL FEATURES | 2 AMP NON-CONTROLLED AVALANCHE VOLTAGE,400V PEAK INVERSE AND DC BLOCKING VOLTAGE,280V WORKING VOLTAGE,FULL WAVE EPOXY BRIDGE RECTIFIER,M50 TO P150 DEG C OPERATING AND STORAGE TEMP RANGE,CASE 0.600 IN. LG;0.600 IN. W;0.200 IN. H;FOUR WIRE LEAD TERMINALS 1.000 IN. MIN LG SPACED ON 0.425 IN. BY 0.425 IN. MTG CENTERS |