Part Number
Definition:
TWO OR MORE DIODE SEMICONDUCTOR DEVICES DESIGNED TO FUNCTION AS A UNIT IN CHANGING ALTERNATING CURRENT TO DIRECT CURRENT. THE DIODE DEVICES ARE INTERNALLY CONNECTED IN SERIES, AND ARE PERMANENTLY CASED, ENCAPSULATED, POTTED, OR MOLDED TOGETHER TO FORM AN INSEPARABLE UNIT. THESE UNITS MAY BE DESIGNED AS EITHER HALF-WAVE OR FULL-WAVE RECTIFIERS AND MAY BE MOUNTED TO FORM EITHER SINGLE PHASE OR THREE PHASE BRIDGES. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FABRICATED IN THE FORM OF A MONOLITHIC OR THIN FILM STRUCTURE THAT PERFORM THE FUNCTION OF A CIRCUIT, SEE INTEGRATED CIRCUIT (AS MODIFIED). EXCLUDES SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; AND RECTIFIER NETWORK, UNITIZED.
CAGE Information
| Code | Company |
|---|---|
| 27777 | L-3 COMMUNICATIONS CORPORATION DBA W |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| MATT | MATERIAL | SILICON |
| MATT | MATERIAL | SILICON |
| AXGY | MOUNTING METHOD | THREADED STUD |
| AFGA | OPERATING TEMP RANGE | +0.0/+55.0 DEG CELSIUS |
| FEAT | SPECIAL FEATURES | 0.875 IN. W ACROSS FLATS |
| ABKW | OVERALL HEIGHT | 0.350 INCHES NOMINAL |
| AJUR | CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 1 PHASE |
| ALAW | ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 140.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 200.0 REVERSE VOLTAGE, DC |
| ABHP | OVERALL LENGTH | 1.088 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 TAB, SOLDER LUG |