Part Number
Part Number:
NSN:
NIIN:
Item Name:
SEMICONDUCTOR DEVICE , THYRISTOR
Definition:
A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 09214 | GENERAL ELECTRIC CO SEMI-CONDUCTOR P |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.60 AMPERES FORWARD CURRENT, TOTAL RMS NANOAMPERES |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| FEAT | SPECIAL FEATURES | INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS CASE |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |