Part Number
Part Number:
NSN:
NIIN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
CAGE Information
| Code | Company |
|---|---|
| 05869 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 12.0 VOLTS MAXIMUM POWER SOURCE |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND BIPOLAR AND PROGRAMMABLE |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CZER | MEMORY DEVICE TYPE | PAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |