Part Number
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
CAGE Information
| Code | Company |
|---|---|
| 96214 | RAYTHEON COMPANY |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQX | CURRENT RATING PER CHARACTERISTIC | -50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.185 INCHES MAXIMUM |
| PRMT | PRECIOUS MATERIAL | GOLD |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -30.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR AND -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR AND -30.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC ALL TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| ABBH | INCLOSURE MATERIAL | METAL |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.210 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |