National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| JAN2N5262 | 81349 | M | 5 | 9 | 3 | TX | ||
| 1854-0363 | 1LQK8 | A | 5 | 2 | 5 | ZZ | ||
| 2N5262 | 04713 | A | C | 1 | 6 | TX | AW | |
| RELEASE5658 | 80131 | A | 5 | 1 | 3 | TX | ||
| 2N5262 | 80131 | A | 3 | 2 | 3 | TX | ||
| JAN2N5262A | C7191 | A | 5 | 9 | 6 | ZG | ||
| 454156-1 | 3B150 | A | 5 | 2 | 5 | 48 | ||
| 1854-0363 | 28480 | A | 5 | 9 | 1 | TX | ||
| JAN2N5262 | C7191 | A | 5 | 2 | 6 | ZG | ||
| 454156-1 | 49956 | A | 5 | 9 | 5 | 48 | ||
| 2N5262 | 49671 | F | 5 | 9 | 3 | TX |
CAGE Information
| Code | Company |
|---|---|
| 04713 | FREESCALE SEMICONDUCTOR INC. |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 1LQK8 | AGILENT TECHNOLOGIES INC. DIV AGILEN |
| 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| C7191 | ADELCO ELEKTRONIK GMBH |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 28480 | HEWLETT PACKARD CO |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 49671 | LOCKHEED MARTIN CORP LOCKHEED MARTIN |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| ADAV | OVERALL DIAMETER | 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 800.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ABHP | OVERALL LENGTH | 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5658 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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2N5262 ,
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,
JAN2N5262 ,
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2N5262 ,
RELEASE5658 ,
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JAN2N5262A ,
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1854-0363 ,
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