National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| SMB653437-1 | 07263 | A | 5 | 2 | 3 | TX | ||
| 2N2221 | 04713 | A | 5 | 1 | 3 | TX | ||
| SMB653437-1 | 01295 | A | 5 | 9 | 3 | TX | ||
| 2N2221 | 49956 | A | 5 | 9 | 3 | TX | ||
| 2N2221 | 07263 | A | 5 | 1 | 3 | TX | ||
| 2N2221 | 01295 | A | 5 | 1 | 3 | TX | ||
| 2N2221 | 3B150 | A | 5 | 1 | 3 | TX | ||
| SMB653437-1 | 04713 | A | 5 | 2 | 3 | TX | ||
| SMB653437-1 | 49956 | A | 5 | 9 | 3 | TX | ||
| SMB653437-1 | 80063 | A | 3 | 2 | 1 | TX | ||
| SMB653437-1 | 3B150 | A | 5 | 2 | 3 | TX |
CAGE Information
| Code | Company |
|---|---|
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
| 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 04713 | FREESCALE SEMICONDUCTOR INC. |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 80063 | US ARMY COMMUNICATIONS & ELECTRONICS |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC |
| AXGY | MOUNTING METHOD | TERMINAL |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 800.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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