National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 723088-14 | 05869 | A | 5 | 1 | 1 | TX | ||
| 2N5093 | 1LU13 | A | 5 | 2 | 6 | 9Z | ||
| 2N5093 | 80131 | A | 5 | 9 | 3 | TX | ||
| 2N5093 | 64039 | A | 5 | 2 | 5 | TX | ||
| RELEASE5587 | 80131 | A | 5 | 9 | 3 | TX | ||
| 2N5093 | 07256 | A | 3 | 2 | E | ZZ | ||
| 2N5093 | 30043 | A | 5 | 2 | 5 | ZZ |
CAGE Information
| Code | Company |
|---|---|
| 05869 | RAYTHEON COMPANY DBA RAYTHEON |
| 1LU13 | GENESIS TECHNOLOGY INTERNATIONAL INC |
| 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 64039 | HYBRID SEMICONDUCTORS & ELECTRONICS |
| 07256 | SILICON TRANSISTOR CORP SUB OF BBF I |
| 30043 | SOLID STATE DEVICES INC. |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 0.50 AMPERES SOURCE CUTOFF CURRENT MINIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTRD | POWER RATING PER CHARACTERISTIC | 2.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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723088-14 ,
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,
723088-14 ,
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