National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 2887383-2 | 3B150 | A | 5 | 2 | 1 | TX | ||
| MEM556-002 | 14936 | A | 5 | 9 | 5 | TX | ||
| 2887383-2 | 10001 | A | 3 | 2 | 1 | TX | ||
| SFC5201 | 01295 | A | 5 | 1 | 3 | TX | ||
| 2887383-2 | 49956 | A | 5 | 9 | 1 | TX |
CAGE Information
| Code | Company |
|---|---|
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 14936 | GENERAL SEMICONDUCTOR INC |
| 10001 | NAVAIR AND NAVSEA MANAGED ORIGINAL D |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQX | CURRENT RATING PER CHARACTERISTIC | -20.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABBH | INCLOSURE MATERIAL | METAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 10001-2887383 DRAWING |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | P-CHANNEL INSULATED GATE TYPE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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