National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
SEMICONDUCTOR DEVICE SET
Definition:
A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| NSA3010 | 43611 | A | C | 1 | 5 | ZZ | AF | |
| NSE8096 | 43611 | A | C | 1 | 5 | ZZ | AF | |
| STD1144 | 07256 | A | 5 | 9 | 5 | ZZ | ||
| STK1016 | 07256 | A | 5 | 9 | 5 | ZZ | ||
| 007000 | 19623 | A | 5 | 1 | A | ZZ | ||
| 007001 | 19623 | A | 5 | 1 | A | ZZ | ||
| 007051 | 19623 | A | 5 | 9 | A | SB | ||
| 007051 | 058R3 | A | 3 | 2 | 5 | ZZ |
CAGE Information
| Code | Company |
|---|---|
| 058R3 | GE AVIATION SYSTEMS LLC DIV CUSTOMER |
| 43611 | MICROSEMI CORP. - MASSACHUSETTS DBA |
| 07256 | SILICON TRANSISTOR CORP SUB OF BBF I |
| 19623 | GE AVIATION SYSTEMS LLC DBA GE AVIAT |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN 2ND TRANSISTOR AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN 2ND TRANSISTOR AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 2ND TRANSISTOR |
| AGAV | END ITEM IDENTIFICATION | F-16 A/B AIRCRAFT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 35.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 1ST TRANSISTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN 2ND TRANSISTOR |
| ABHP | OVERALL LENGTH | 1.252 INCHES MAXIMUM 1ST TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION 2ND TRANSISTOR |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN ALL TRANSISTOR AND 1 CASE ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM 1ST TRANSISTOR AND 2.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM 1ST TRANSISTOR |
| ABKW | OVERALL HEIGHT | 0.328 INCHES MAXIMUM 2ND TRANSISTOR |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM 2ND TRANSISTOR |
| ABKW | OVERALL HEIGHT | 0.340 INCHES MAXIMUM 1ST TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 2ND TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM 2ND TRANSISTOR AND 50.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM 2ND TRANSISTOR |
| ABMK | OVERALL WIDTH | 0.700 INCHES MAXIMUM 1ST TRANSISTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PNP 1ST TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR 1ST TRANSISTOR |
| ABBH | INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN 1ST TRANSISTOR AND 275.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN 1ST TRANSISTOR AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 1ST TRANSISTOR |
| AKPV | MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM 2ND TRANSISTOR |