National Stock Number (NSN) Output Data
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 520/4/97358/000 | K4547 | H | 5 | 9 | 2 | ZK | ||
| XC-5491 | 27014 | A | 3 | 2 | E | TX | ||
| A1-11-0182 | 18560 | A | 5 | 2 | 5 | TX | ||
| 91524257 | F6481 | A | 5 | 2 | 5 | ZF | ||
| XC-5491 | 53184 | F | 5 | 9 | 5 | TX |
CAGE Information
| Code | Company |
|---|---|
| 18560 | ACR ELECTRONICS INC. |
| K4547 | SIEMENS AIR TRAFFIC MANAGEMENT |
| 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| F6481 | THALES |
| 53184 | XCITON CORP |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTSB | LUMINOUS INTENSITY | 1.8 MILLICANDELA NOMINAL ALL LIGHT EMITTING DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 115.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL LIGHT EMITTING DIODE |
| CTRX | COLOR TONE PRODUCED PER SOURCE | GREEN LENS 2ND LIGHT EMITTING DIODE |
| ADAV | OVERALL DIAMETER | 0.190 INCHES NOMINAL |
| ABHP | OVERALL LENGTH | 0.340 INCHES NOMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.8 MAXIMUM FORWARD VOLTAGE, DC ALL LIGHT EMITTING DIODE |
| ABJT | TERMINAL LENGTH | 1.410 INCHES NOMINAL |
| FEAT | SPECIAL FEATURES | ALL LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES SOURCE CUTOFF CURRENT UNIVERSAL ALL LIGHT EMITTING DIODE |
| ASKA | COMPONENT NAME AND QUANTITY | 2 LIGHT EMITTING DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| CTRX | COLOR TONE PRODUCED PER SOURCE | RED LENS 1ST LIGHT EMITTING DIODE |
| AEXK | LENS TRANSPARENCY | TRANSLUCENT ALL LIGHT EMITTING DIODE |
| CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE ALL LIGHT EMITTING DIODE |