National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
7110358-001 | 93322 | A | 5 | 2 | A | TX | ||
IRFF9120 | 59993 | C | 5 | 2 | 4 | TX | ||
04ES053-001 | 24587 | A | 3 | 2 | A | TX |
CAGE Information
Code | Company |
---|---|
24587 | RAYTHEON CO ESD LONG ISLAND DIV |
93322 | GE AVIATION SYSTEMS LLC DBA GE AVIAT |
59993 | INTERNATIONAL RECTIFIER CORPORATION |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
TEST | TEST DATA DOCUMENT | 24587-04ES053 DRAWING |
CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE AND -16.00 AMPERES FORWARD CURRENT, AVERAGE ANY ACCEPTABLE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
AYQS | TERMINAL CIRCLE DIAMETER | 0.205 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
ABBH | INCLOSURE MATERIAL | METAL |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
CTRD | POWER RATING PER CHARACTERISTIC | 20.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | P-CHANNEL INSULATED GATE TYPE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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