National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 2N5959 | 34156 | A | E | 8 | 3 | TX | ||
| 2N5959 | 07256 | A | E | 8 | 3 | TX | ||
| RELEASE6156 | 80131 | A | E | 8 | 3 | TX | ||
| 869396-1 | 49956 | A | 5 | 9 | E | TX | ||
| 2N5959 | 24444 | F | E | 8 | 3 | TX | ||
| JAN2N5959 | 81349 | M | 5 | 1 | E | TX | ||
| 2N5959 | 21845 | A | E | 8 | E | TX | ||
| 869396-1 | 3B150 | A | 3 | 2 | E | TX | ||
| 179BBA157 | 21845 | A | 5 | 2 | 5 | ZZ | ||
| 2N5959 | 80131 | A | E | 8 | E | TX | ||
| 2N5959 | 12969 | A | E | 8 | E | ZZ |
CAGE Information
| Code | Company |
|---|---|
| 07256 | SILICON TRANSISTOR CORP SUB OF BBF I |
| 34156 | SEMICOA CORPORATION SALES AND MARKET |
| 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 21845 | SOLITRON DEVICES INC. |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 12969 | MICRO USPD INC |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| AXGY | MOUNTING METHOD | TERMINAL |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ABBH | INCLOSURE MATERIAL | METAL |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ABJT | TERMINAL LENGTH | 0.250 INCHES MINIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABHP | OVERALL LENGTH | 0.060 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-50 |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| CTRK | TRANSFER RATIO | 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |