National Stock Number (NSN) Output Data
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
PMA1010 | 17856 | A | 5 | 2 | 5 | TX | ||
94-7287 | 59993 | C | 5 | 9 | 5 | TX | ||
JANTXV2N7334 | 59993 | C | 5 | 2 | 5 | ZZ | ||
654739-1 | 82577 | A | 3 | 2 | A | TX |
CAGE Information
Code | Company |
---|---|
17856 | SILICONIX INCORPORATED DIV SILICONIX |
59993 | INTERNATIONAL RECTIFIER CORPORATION |
82577 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE ALL TRANSISTOR AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
ABKW | OVERALL HEIGHT | 0.185 INCHES MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 0.95 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
AXGY | MOUNTING METHOD | TERMINAL |
ABHP | OVERALL LENGTH | 0.785 INCHES MAXIMUM |
TTQY | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
ABBH | INCLOSURE MATERIAL | CERAMIC |
TEST | TEST DATA DOCUMENT | 82577-654739 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
ABMK | OVERALL WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.125 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |