National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
SEMICONDUCTOR DEVICE SET
Definition:
A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| JANTX1N5711 | 81349 | M | 5 | 1 | E | ZZ | ||
| DSB 1037 | 55801 | A | 5 | 2 | 6 | ZZ | ||
| QSCH-1459 | 54893 | A | 5 | 9 | 6 | TX | ||
| A2X2033 | 21847 | A | 5 | 2 | 6 | TX | ||
| A3006760-1 | 80063 | A | 3 | 2 | A | TX | ||
| 4E598 | 96341 | A | 5 | 9 | 6 | TX | ||
| QSCH-1459 | 50434 | A | 5 | 9 | 6 | TX |
CAGE Information
| Code | Company |
|---|---|
| 21847 | FEI MICROWAVE INC |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 55801 | COMPENSATED DEVICES INC |
| 54893 | HEWLETT-PACKARD CO COMMUNICATIONS CO |
| 80063 | US ARMY COMMUNICATIONS & ELECTRONICS |
| 96341 | COBHAM ELECTRONIC SYSTEMS INC. DBA C |
| 50434 | AVAGO TECHNOLOGIES U.S. INC. DIV AVA |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA | COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| AGAV | END ITEM IDENTIFICATION | 5895-01-177-0791 RECEIVER-TRANSMITTER |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.068 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TEST | TEST DATA DOCUMENT | 80063-A3006760 DRAWING |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| BBJD | FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
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